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首页-Home 无机-Inorganic Chem Sputtering Targets ITO (Low density) Sputtering Target

ITO (Low density) Sputtering Target

1
ITO(氧化铟锡) 压片
ITO (Low density) Sputtering Target
In2O3+SnO2；4N
10*3; 18*8; 24*14; 30*10mm or according to the customer's requirements
Relative density: 60±2%
Resistivity ≤1.6X10-4 Ω·cm
ITO conductive film, LCD, LED, etc
Sputtering Targets
  • 产品详情-Products Details

Form : Green Tablets

Production process of ITO target

1. Hot isostatic pressing method

2. Hot pressing method

3. Sintering method

 

Grain size: 5 ~ 15 µ M

Resistivity: 1.2 × 10-4Ω·cm

Linear expansion coefficient: 5.8 × 10-6K-1


上一个：Nickel Sputtering Target 下一个：Chromium Target

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