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首页-Home 无机-Inorganic Chem Sputtering Targets ITO Target

ITO Target

9
ITO (氧化铟锡) 靶材
ITO Target
In2O3+SnO2； 4N
φ25, φ50, φ60, φ76 φ80 φ100mm, φ25, φ50, φ60, φ76 φ80 φ100mm, 3-6mm
>98%
Resistivity ≤ 0.25m Ω· cm
Flat panel display, anti radiation glass, solar cell, etc
Sputtering Targets
  • 产品详情-Products Details

Form : disc, Cu back binding is optional

Production process of ITO target

1. Hot isostatic pressing method

2. Hot pressing method

3. Sintering method

 

Ratio: In2O3: SnO2 = 90:10wt%, 95:5wt%

Density: ＞ 99%

Oxygen loss rate: ＜ 2%

Flexural strength: 125mpa

Resistivity ≤ 0.25m Ω· cm

Linear expansion coefficient: 5 × 10-6K-1

Phase structure: single In2O3 phase

Shape and specification: processed according to user requirements

Color: Gray Black

Packaging: aluminum foil bag vacuum packaging



上一个：ITO (High density) Tablets 下一个：Titanium Boride

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